%0 Journal Article
%T Room temperature detection of sub-terahertz radiation in double-grating-gate transistors
%+ Groupe d'étude des semiconducteurs (GES)
%A Coquillat, Dominique
%A Nadar, S.
%A Teppe, Frederic
%A Dyakonova, N.
%A Boubanga-Tombet, S.
%A Knap, W.
%A Nishimura, T.
%A Otsuji, T.
%A Meziani, Y.
%A Tsymbalov, G.
%A Popov, V.
%< avec comité de lecture
%@ 1094-4087
%J Optics Express
%I Optical Society of America - OSA Publishing
%V 18
%N 6
%P 6024
%8 2010-03-15
%D 2010
%K INVERSION-LAYERS
%K PLASMON MODES
%K SUBTERAHERTZ
%K WAVES
%K FIELD-EFFECT TRANSISTORS
%K RESONANT DETECTION
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Journal articles
%X Room temperature photovoltaic non-resonant detection by large area double-grating-gate InGaP/InGaAs/GaAs heterostructures was investigated in sub-THz range (0.24 THz). Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields excited in the structure by incoming terahertz radiation allowed us to interpret quantitatively the results and conclude that this detection takes place mainly in the regions of strong oscillating electric field excited in depleted portions of the channel.
%G English
%L hal-00545630
%U https://hal.science/hal-00545630
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2