%0 Journal Article
%T Terahertz response of InGaAs field effect transistors in quantizing magnetic fields
%+ Groupe d'étude des semiconducteurs (GES)
%+ Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
%A Klimenko, Oleg
%A Mityagin, Yu.
%A Videlier, Hadley
%A Teppe, Frederic
%A Dyakonova, N.
%A Consejo, Christophe
%A Bollaert, S.
%A Murzin, V.
%A Knap, Wojciech
%< avec comité de lecture
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 97
%N 2
%P 022111
%8 2010-07-12
%D 2010
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Journal articles
%X Terahertz (THz) detection by plasma wave mechanism in InGaAs field effect transistors is studied in high/quantizing magnetic fields regime. The correlation between the photovoltaic response and magnetoresistance is revealed. It allows explaining the dominant physical mechanism responsible for strong oscillations observed in the transistor THz photoresponse. The results indicate also a serious discrepancy between experimental data and existing theoretical model. (C) 2010 American Institute of Physics.
%G English
%L hal-00545623
%U https://hal.science/hal-00545623
%~ CNRS
%~ UNIV-VALENCIENNES
%~ UNIV-MONTP2
%~ IEMN
%~ GES
%~ UNIV-MONTPELLIER
%~ UNIV-LILLE
%~ UM1-UM2