%0 Journal Article
%T Homogeneous linewidth of the intraband transition at 1.55 mu m in GaN/AlN quantum dots
%+ Laboratoire Pierre Aigrain (LPA)
%+ Institut d'électronique fondamentale (IEF)
%A Nguyen, D. T.
%A Wuester, W.
%A Roussignol, Ph.
%A Voisin, C.
%A Cassabois, Guillaume
%A Tchernycheva, M.
%A Julien, F. H.
%A Guillot, F.
%A Monroy, E.
%< avec comité de lecture
%Z GES:10-034
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 97
%P 061903
%8 2010
%D 2010
%R 10.1063/1.3476340
%K aluminium compounds
%K coherence
%K diffusion
%K electron-electron scattering
%K gallium compounds
%K III-V semiconductors
%K semiconductor quantum dots
%K wide band gap semiconductors
%K WELLS
%K ABSORPTION
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We present homogeneous line width measurements of the intraband transition at 1.55 mu m in GaN/AlN quantum dots by means of nonlinear spectral hole-burning experiments. The square-root dependence of the differential transmission signal with the incident pump power reveals the importance of electron-electron scattering in the population relaxation dynamics. We find on the contrary that this scattering process plays a minor role in the coherence relaxation dynamics since the homogeneous linewidth of 15 meV at 5 K does not depend on the incident pump power. This suggests the predominance of other dephasing mechanisms such as spectral diffusion, and temperature-dependent measurements support this hypothesis. (C) 2010 American Institute of Physics. [doi:10.1063/1.3476340]
%G English
%L hal-00545467
%U https://hal.science/hal-00545467
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