%0 Conference Proceedings
%T Excitonic spin relaxation in GaN
%+ Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS)
%A Brimont, Christelle
%A Gallart, M.
%A Cregut, O.
%A Honerlage, B.
%A Gilliot, P.
%< avec comité de lecture
%Z GES:08-112
%( PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6
%B 7th International Conference on Nitride Semiconductors (ICNS-7)
%C Las Vegas (NV), United States
%I V C H PUBLISHERS, SUITE 909, 220 E 23RD ST, NEW YORK, NY 10010 USA
%V 5
%N 6
%P 2355-2357
%8 2007-09-16
%D 2007
%R 10.1002/pssc.200778564
%K QUANTUM-WELLS
%K GAAS
%K DYNAMICS
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Conference papers
%X By performing non-degenerate pump-probe experiments, we study the relaxation dynamics of spin-polarized A and B excitons in wurtzite epitaxial GaN. By analyzing the differential reflection of the two circularly polarized probe components, we extract characteristic times of the different spin relaxation processes. We show that the spin relaxation of the exciton as a whole is negligible in regard to the spin relaxation of the individual carriers. We determined T-e = 15 ps for the electron in the conduction band, T-hh = 5 ps, and T-lh = 1.5 ps for the heavy hole and for the light hole, respectively. The quite long HH relaxation time can be related to the band structure in which the degeneracy between different spin valence bands is lifted.
%G English
%L hal-00545175
%U https://hal.science/hal-00545175
%~ CNRS
%~ UNIV-STRASBG
%~ SITE-ALSACE
%~ TEST2-HALCNRS