%0 Journal Article
%T Optical and spin coherence of excitons in zinc-blende GaN
%+ Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS)
%+ Optoélectronique Quantique (LPCNO)
%+ Nanophysique et Semiconducteurs (NEEL - NPSC)
%A Brimont, Christelle
%A Gallart, M.
%A Cregut, O.
%A Hoenerlage, B.
%A Gilliot, P.
%A Lagarde, Delphine
%A Balocchi, Andrea
%A Amand, Thierry
%A Marie, Xavier
%A Founta, S.
%A Mariette, Henri
%< avec comité de lecture
%Z GES:09-091
%@ 0021-8979
%J Journal of Applied Physics
%I American Institute of Physics
%V 106
%P 053514
%8 2009
%D 2009
%R 10.1063/1.3197035
%K electron spin polarisation
%K time resolved spectra
%K wide band gap semiconductors
%K electron-hole recombination
%K exchange interactions (electron)
%K excitons
%K gallium compounds
%K SEMICONDUCTORS
%K III-V semiconductors
%K RELAXATION
%K photoluminescence
%K ELECTRONS
%K NITRIDE
%K semiconductor epitaxial layers
%K reflectivity
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X The carrier recombination processes and the relaxation dynamics of spin-polarized excitons in cubic epitaxial GaN have been investigated by time-resolved photoluminescence and pump-probe spectroscopy experiments. We evidence a very fast exciton spin relaxation tau(S)similar to 0.3 ps that is influenced by both the high defect concentration and the strong electron-hole exchange interaction. Spectral oscillatory features of the transient reflectivity are observed for negative delays that allow us to determine the exciton optical dephasing time T-2.
%G English
%L hal-00545165
%U https://hal.science/hal-00545165
%~ UNIV-TLSE3
%~ UGA
%~ CNRS
%~ UNIV-GRENOBLE1
%~ INSA-TOULOUSE
%~ INPG
%~ NEEL
%~ UNIV-STRASBG
%~ NEEL-NPSC
%~ LPCNO
%~ SITE-ALSACE
%~ INSA-GROUPE
%~ TOULOUSE-INP
%~ UNIV-UT3
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