%0 Conference Proceedings
%T 2DEG spectroscopy with resonant tunneling through single impurity state
%+ Institute of Experimental Physics [Warsaw] (IFD)
%+ Groupe d'étude des semiconducteurs (GES)
%A Gryglas, Marta
%A Baj, M.
%A Jouault, Benoit
%A Raymond, Andre
%A Chaubet, Christophe
%A Chenaud, Boris
%A Robert, Jean-Louis
%A Faini, G.
%< avec comité de lecture
%Z GES:03-024
%( International Journal of Nanoscience, Vol 2, No 6
%( International Journal of Nanoscience, Vol 2, No 6
%B 11th International Symposium on Nanostructures - Physics and Technology
%C St Petersburg (RUSSIA), France
%I WORLD SCIENTIFIC PUBL CO INC, 687 HARTWELL ST, TEANECK, NJ 07666 USA
%V 2
%P 585-592
%8 2003-06-23
%D 2003
%K tunneling
%K impurity
%K 2DEG
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We have used silicon impurities in an aluminum arsenide barrier to probe an adjacent two-dimensional electron gas (2DEG). A single impurity acts as a local spectrometer and scans the local density of states of the 2DEG. Magnetotransport experiments have been performed at low temperature with a magnetic field B applied along the direction of the current. Current-voltage characteristics strongly depend on B and reveal the formation of Landau levels (LLs).
%G English
%L hal-00545080
%U https://hal.science/hal-00545080
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2