%0 Journal Article
%T Electrical transport properties in (111) growth-axis GaAlAs/GaInAs heterostructures
%+ Groupe d'étude des semiconducteurs (GES)
%A Konczewicz, Leszek
%A Jouault, Benoit
%A Contreras, Sylvie
%A Sadowski, Ml
%A Robert, Jean-Louis
%A Blanc, S.
%A Fontaine, C.
%< avec comité de lecture
%Z GES:01-003
%@ 0370-1972
%J physica status solidi (b)
%I Wiley
%V 223
%P 507-512
%8 2001
%D 2001
%K STRAINED-LAYER SUPERLATTICES
%K OPTICAL-PROPERTIES
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X The effect of an internal piezoelectric field on electrical transport phenomena has been studied in GaAlAs/GaInAs heterostructures grown on (001) and (111)B GaAs substrates. The two-dimensional electron gas (2DEG) in the structure was obtained by conventional modulation delta -doping in the barrier layer. The: conductivity and Nail effect were studied at room temperature as a function of hydrostatic pressures up to 1000 MPa. The observed pressure changes of the 2DEG concentration have been compared with theoretical predictions, taking into account the strain-induced electric fields in the barrier layer. The piezoresistive behaviour under uniaxial stress has also been determined. It was found that piezo-effects are more pronounced in the case of the material with the built-in piezoelectric field.
%G English
%L hal-00544463
%U https://hal.science/hal-00544463
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2