%0 Conference Proceedings
%T Resonant tunnelling through single donor states in GaAs/AlAs/GaAs devices
%+ Groupe d'étude des semiconducteurs (GES)
%A Gryglas, M.
%A Baj, M.
%A Jouault, Benoit
%A Faini, G.
%A Cavanna, A.
%< avec comité de lecture
%Z GES:03-021
%( PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
%( PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
%B International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02)
%C TOULOUSE (FRANCE), France
%V 17
%P 303-304
%8 2002-07-22
%D 2002
%K resonant tunnelling
%K X-minimum-related donor
%K single impurity
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Our paper is a first step towards tunnelling spectroscopy of individual X-minimum-related shallow donors. We investigated I-V characteristics of submicrometer mesa structures made on GaAs/AlAs/GaAs wafers delta-doped with silicon in the middle of AlAs layer. At 4.2 K and magnetic field up to 6 T we resolved well-separated peaks attributed to resonant tunnelling via individual donors. (C) 2002 Elsevier Science B.V. All rights reserved.
%G English
%L hal-00544455
%U https://hal.science/hal-00544455
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2