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| HAL : hal-00544187, version 1 |
| DOI : 10.1109/RME.2009.5201318 |
| Fiche détaillée |  Récupérer au format |
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| 5th International Conference on Ph.D. Research in Microelectronics & Electronics (PRIME 2009), Cork : Irlande (2009) |
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| SMR Under High Power Study For Reliability |
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| N. Ben Hassine 1, 2, 3P. Mercier 4 |
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| (2009) |
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| This work deals with BAW SMR reliability at high power levels. Experimental methods easy to set up in common RF laboratories are presented and validated. Experimental results concerning frequency shifts versus the dissipated power and the harmonics generation are reported. The main origins of these effects are discussed physically and conclusions in light of the obtained results about the characterization method and the device reliability are drawn. |
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| 1 : | Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA) |
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CNRS : UMR5159 – Université Joseph Fourier - Grenoble I – Institut National Polytechnique de Grenoble (INPG) |
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| 2 : | ST Microelectronics (ST Microelectronics, Crolles) |
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ST microelectronics |
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| 3 : | Laboratoire d'Electronique et des Technologies de l'Information (LETI) |
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CEA : DRT/LETI |
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| 4 : | Etablissement Français du Sang - Alpes-Méditerranée (EFS - Alpes-Méditerranée) |
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Etablissement Français du Sang |
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| Domaine | : | Sciences de l'ingénieur/Micro et nanotechnologies/Microélectronique |
| hal-00544187, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00544187 | |
| oai:hal.archives-ouvertes.fr:hal-00544187 | |
| Contributeur : Lucie Torella | |
| Soumis le : Mardi 7 Décembre 2010, 14:38:22 | |
| Dernière modification le : Mardi 7 Décembre 2010, 14:38:22 | |
