SMR Under High Power Study For Reliability

N. Ben Hassine (1, 2, 3) , P. Mercier (4) , Ph. Renaux (3)

1 TIMA - Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés
2 ST-CROLLES - STMicroelectronics [Crolles]
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 EFS - Alpes-Méditerranée - Etablissement Français du Sang - Alpes-Méditerranée

This work deals with BAW SMR reliability at high power levels. Experimental methods easy to set up in common RF laboratories are presented and validated. Experimental results concerning frequency shifts versus the dissipated power and the harmonics generation are reported. The main origins of these effects are discussed physically and conclusions in light of the obtained results about the characterization method and the device reliability are drawn.

Domaines: Micro et nanotechnologies/Microélectronique

N. Ben Hassine, P. Mercier, Ph. Renaux. SMR Under High Power Study For Reliability. 5th International Conference on Ph.D. Research in Microelectronics & Electronics (PRIME 2009), Jul 2009, Cork, Ireland. pp.248 - 251, ⟨10.1109/RME.2009.5201318⟩. ⟨hal-00544187⟩