%0 Conference Proceedings
%T Strain effects in device processing of silicon-on-insulator materials
%+ Groupe d'étude des semiconducteurs (GES)
%A Camassel, Jean
%A Tiberj, Antoine
%F Invité
%< avec comité de lecture
%Z GES:03-019
%( APPLIED SURFACE SCIENCE
%B 11th International Conference on Solid Films and Surfaces (ICSFE-11)
%C MARSEILLE (FRANCE), France
%V 212
%P 742-748
%8 2002-07-08
%D 2002
%K bonded silicon-on-insulator
%K processing
%K SiO2
%K Si3N4
%K THERMAL-OXIDATION
%K STRESS
%K SOI
%K INTERFACE
%K LEAKAGE
%K SI
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Reporting on residual strain in silicon-on-insulator (SOI) materials we show that multi-insulating layer structures, in which silicon dioxide and silicon nitride are mixed with appropriate thicknesses, can lead to a new family of strain-free materials. This reduces only the original strain and, of course, does not significantly modify any process-induced effect. However, after proper annealing, this should help coming back to a better relaxation level. (C) 2003 Elsevier Science B.V. All rights reserved.
%G English
%L hal-00543872
%U https://hal.science/hal-00543872
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2