%0 Conference Proceedings
%T Process-induced strain in silicon-on-insulator materials
%+ Groupe d'étude des semiconducteurs (GES)
%A Tiberj, Antoine
%A Fraisse, B.
%A Blanc, Caroline
%A Contreras, Sylvie
%A Camassel, Jean
%< avec comité de lecture
%Z GES:02-005
%B Conference on Extended Defects in Semiconductors (EDS 2002)
%C BOLOGNA (ITALY), France
%V 14
%P 13411-13416
%8 2002-06-01
%D 2002
%K THERMAL-OXIDATION
%K STRESS
%K SOI
%K DEPENDENCE
%K INTERFACE
%K LEAKAGE
%K GLASSES
%K MODES
%K TIO2
%K SI
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We present a detailed investigation of the influence of oxidation and thinning processes on the in-plane stress in silicon-on-insulator materials. Combining double x-ray diffraction, Fourier transformed infrared and micro-Raman spectroscopy, we show that one can separately evaluate the stress present in the silicon over layer, the buried oxide and the underlying (handle) silicon wafer at any time of a device-forming process.
%G English
%L hal-00543870
%U https://hal.science/hal-00543870
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2