%0 Journal Article
%T Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN/GaN heterostructures
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%+ Groupe d'étude des semiconducteurs (GES)
%A Lorenzini, P.
%A Bougrioua, Z.
%A Tiberj, Antoine
%A Tauk, R.
%A Azize, M.
%A Sakowicz, M.
%A Karpierz, K.
%A Knap, Wojciech
%< avec comité de lecture
%Z GES:05-083
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 87
%P 232107
%8 2005
%D 2005
%R 10.1063/1.2140880
%K DISLOCATION SCATTERING
%K MOBILITY
%K GAN/ALGAN
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X The transport and quantum lifetimes were respectively deduced from low-temperature mobility and Shubnikov-de Haas measurements as a function of carrier density in metal organic vapor phase epitaxy-grown AlGaN/GaN/sapphire heterostructures. We show experimentally that the lifetime ratio varies as a bell curve, qualitatively confirming a recent theoretical prediction. However the experimental ratio varied much less than was theoretically predicted: From 9 to 19 for carrier densities in 1-9x10(12) cm(-2) range. Moreover, we show the variation of quantum time with carrier density presents some discrepancy with the theoretical study. We also show that transport to quantum lifetime ratio cannot be used alone as a clear figure of merit from AlGaN/GaN heterojunctions. (c) 2005 Americian Institute of Physics.
%G English
%L hal-00543864
%U https://hal.science/hal-00543864
%~ UNICE
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ CRHEA
%~ UM1-UM2