%0 Journal Article
%T Low temperature electron mobility and concentration under the gate of AlGaN/GaN field effect transistors
%+ Groupe d'étude des semiconducteurs (GES)
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%+ Institute of Experimental Physics [Warsaw] (IFD)
%A Sakowicz, M.
%A Tauk, R.
%A Lusakowski, J.
%A Tiberj, Antoine
%A Knap, Wojciech
%A Bougrioua, Z.
%A Azize, M.
%A Lorenzini, P.
%A Karpierz, K.
%A Grynberg, M.
%< avec comité de lecture
%Z GES:06-065
%@ 0021-8979
%J Journal of Applied Physics
%I American Institute of Physics
%V 100
%P 113726
%8 2006
%D 2006
%R 10.1063/1.2353786
%K SI MOSFETS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X High electron mobility field effect transistors were fabricated on AlGaN/GaN heterostructures and their magnetoresistance was measured at 4.2 K up to 10 T with simultaneous modulation of the gate potential. Low and high magnetic field data were used to determine the electron mobility (mu) and concentration (n), respectively, in the gated part of the transistor channel. With these measurements we present a method to determine mu and n under the gate of a transistor, which does not require knowledge of the transistor gate length, access resistance, threshold voltage, or capacitance. We discuss applications of this method for nanometer and ballistic transistors. (c) 2006 American Institute of Physics.
%G English
%L hal-00543860
%U https://hal.science/hal-00543860
%~ UNICE
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ CRHEA
%~ UM1-UM2