%0 Journal Article
%T Selective epitaxial growth of graphene on SiC
%+ Groupe d'étude des semiconducteurs (GES)
%+ Centro Nacional de Microelectronica [Spain] (CNM)
%+ Institut de Ciència de Materials de Barcelona (ICMAB)
%A Camara, Nicolas
%A Rius, G.
%A Huntzinger, Jean-Roch
%A Tiberj, Antoine
%A Mestres, N.
%A Godignon, P.
%A Camassel, Jean
%< avec comité de lecture
%Z GES:08-109
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 93
%P 123503
%8 2008
%D 2008
%Z 0806.4056
%R 10.1063/1.2988645
%K GRAPHITE
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We present a method of selective epitaxial growth of few layers graphene (FLG) on a "prepatterned" silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at similar to 1582 cm(-1) in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth. (C) 2008 American Institute of Physics.
%G English
%L hal-00543852
%U https://hal.science/hal-00543852
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2