%0 Journal Article
%T Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy
%+ Istituto per la Microelettronica e Microsistemi [Catania] (IMM)
%+ Department of Physics, Chemistry and Biology [Linköping] (IFM)
%+ Groupe d'étude des semiconducteurs (GES)
%A Sonde, S.
%A Giannazzo, F.
%A Raineri, V.
%A Yakimova, R.
%A Huntzinger, Jean-Roch
%A Tiberj, Antoine
%A Camassel, Jean
%< avec comité de lecture
%Z GES:09-086
%@ 1098-0121
%J Physical Review B: Condensed Matter and Materials Physics (1998-2015)
%I American Physical Society
%V 80
%P 241406
%8 2009
%D 2009
%R 10.1103/PhysRevB.80.241406
%K electric properties
%K epitaxial layers
%K Fermi level
%K graphene
%K interface structure
%K nanostructured materials
%K Schottky barriers
%K silicon compounds
%K ELECTRONIC-PROPERTIES
%K EPITAXIAL GRAPHENE
%K SCHOTTKY
%K CONTACTS
%K TRANSISTORS
%K TRANSPORT
%K FILMS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X The current transport across the graphene/4H-SiC interface has been investigated with nanometric lateral resolution by scanning current spectroscopy on both epitaxial graphene (EG) grown on (0001) 4H-SiC and graphene exfoliated from highly oriented pyrolytic graphite deposited on the same substrate [deposited graphene (DG)]. This study reveals that the Schottky barrier height (SBH) of EG/4H-SiC (0.36 +/- 0.1 eV) is similar to 0.49 eV lower than the SBH of DG/4H-SiC (0.85 +/- 0.06 eV). This result is discussed in terms of the Fermi-level pinning similar to 0.49 eV above the Dirac point in EG due to the presence of positively charged states at the interface between the Si face of 4H-SiC and the carbon-rich buffer layer, which is the precursor for EG formation.
%G English
%L hal-00543845
%U https://hal.science/hal-00543845
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2