%0 Conference Proceedings
%T Differences Between Graphene Grown On Si-face And C-face
%+ Groupe d'étude des semiconducteurs (GES)
%+ Centro Nacional de Microelectronica [Spain] (CNM)
%+ Institut de Ciència de Materials de Barcelona (ICMAB)
%A Camara, Nicolas
%A Caboni, A.
%A Huntzinger, Jean-Roch
%A Tiberj, Antoine
%A Mestres, N.
%A Godignon, P.
%A Camassel, Jean
%< avec comité de lecture
%Z GES:10-030
%( SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2
%B 13th International Conference on Silicon Carbide and Related Materials
%C Nurnberg (GERMANY), France
%I TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
%V 645-648
%P 581-584
%8 2009-10-11
%D 2009
%K epitaxial graphene
%K Raman
%K SiC
%K AMORPHOUS-CARBON
%K GAS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Epitaxial graphene growth is significantly different depending on the polarity of the 6H-SiC surface: Si- or C-face. On the Si-face, a uniform coverage of few layers on the whole sample can be obtained, but with electrical properties disturbed by the presence of a Carbon-rich buffer layer at the interface. On the contrary, on the C-face, we demonstrated that almost free-standing very large monolayers of graphene can be obtained by covering the sample with a graphitic cap during the growth.
%G English
%L hal-00543832
%U https://hal.science/hal-00543832
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2