%0 Conference Proceedings
%T Raman, low temperature photoluminescence and transport investigation of N-implanted 6H-SiC
%+ Groupe d'étude des semiconducteurs (GES)
%A Thomas, P.
%A Contreras, Sylvie
%A Juillaguet, Sandrine
%A Robert, Jean-Louis
%A Camassel, Jean
%A Gimbert, J.
%A Billon, T.
%A Jaussaud, C.
%< avec comité de lecture
%Z GES:98-002
%( SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2
%B 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97)
%C STOCKHOLM (SWEDEN), France
%I TRANSTEC PUBLICATIONS LTD, BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND
%V 264-2
%P 725-728
%8 1997-08-31
%D 1997
%K SiC
%K nitrogen implantation
%K electrical activation
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We report a combined investigation of Raman, low temperature photoluminescence (LTPL) and high temperature transport measurements performed on nitrogen implanted p-type epitaxial layers of 6H-SiC.
%G English
%L hal-00543782
%U https://hal.science/hal-00543782
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2