%0 Conference Proceedings
%T Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC
%+ Groupe d'étude des semiconducteurs (GES)
%A Pernot, J.
%A Contreras, Sylvie
%A Camassel, Jean
%A Robert, Jean-Louis
%< avec comité de lecture
%Z GES:05-082
%( SILICON CARBIDE AND RELATED MATERIALS 2004
%B 5th European Conference on Silicon Carbide and Related Materials
%C Bologna (ITALY), France
%I TRANS TECH PUBLICATIONS LTD, BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND
%V 483
%P 401-404
%8 2004-08-31
%D 2004
%K p-type 4H-SiC
%K aluminium implantation
%K Hall effect measurements
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 &PLUSMN; 10 %) with apparition of a large number of compensating centres in the implanted layers.
%G English
%L hal-00543771
%U https://hal.science/hal-00543771
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2
%~ TEST3-HALCNRS