%0 Conference Proceedings
%T 4H-SiC material for Hall effect and high-temperature sensors working in harsh environments
%+ Groupe d'étude des semiconducteurs (GES)
%A Robert, Jean-Louis
%A Contreras, Sylvie
%A Camassel, Jean
%A Pernot, J.
%A Juillaguet, Sandrine
%A Di Cioccio, L.
%A Billon, T.
%< avec comité de lecture
%Z GES:02-004
%( SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS
%B International Conference on Silicon Carbide and Related Materials
%C TSUKUBA (JAPAN), France
%I TRANS TECH PUBLICATIONS LTD, BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND
%V 389-3
%P 1435-1438
%8 2001-10-28
%D 2001
%K 4H-SiC
%K exhaustion regime
%K Hall sensor
%K high temperature
%K temperature sensors
%K EPITAXIAL LAYERS
%K DEPOSITION
%K 4H
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We report electrical and optical measurements performed on low-doped, n-type 4H-SiC. We show that below a typical carrier concentration of similar to5 10(15) cm(-3) at room temperature, they work in the so-called exhaustion regime from 300 K. The carrier concentration remains constant and the resistivity increases linearly at a rate of 3400 ppm/K from 500 to 800 K. This establishes low doped SiC as a good candidate to produce high performance Hall sensors, working in harsh environment, with a large sensitivity and a low thermal drift.
%G English
%L hal-00543769
%U https://hal.science/hal-00543769
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2