%0 Conference Proceedings
%T LTPL investigation of N-Ga and N-Al donor-acceptor pair spectra in 3C-SiC layers grown by VLS on 6H-SiC substrates
%+ Groupe d'étude des semiconducteurs (GES)
%+ Laboratoire des Multimatériaux et Interfaces (LMI)
%+ Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI)
%A Sun, J. W.
%A Zoulis, G.
%A Lorenzzi, J.
%A Jegenyes, N.
%A Juillaguet, Sandrine
%A Peyre, Herve
%A Souliere, V.
%A Ferro, G.
%A Milesi, F.
%A Camassel, Jean
%< avec comité de lecture
%Z GES:10-029
%( SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2
%B 13th International Conference on Silicon Carbide and Related Materials
%C Nurnberg (GERMANY), France
%I TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
%V 645-648
%P 415-418
%8 2009-10-11
%D 2009
%K donor-acceptor-pair
%K photoluminescence
%K 6H
%K TEMPERATURE
%K 4H
%K 3C
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Ga-doped 3C-SiC layers have been grown on on-axis 6H-SiC (0001) substrates by the VLS technique and investigated by low temperature photoluminescence (LTPL) measurements. On these Ga-doped samples, all experimental spectra collected at 5K were found dominated by strong N-Ga donor-acceptor pair (DAP) transitions and phonon replicas. As expected, the N-Ga DAP zero-phonon line (ZPL) was located at lower energy (similar to 86 meV) below the N-Al one. Fitting the transition energies for the N-Al close DAP lines gave 251 meV for the Al acceptor binding energy in 3C-SiC and, by comparison, 337 meV for the Ga acceptor one.
%G English
%L hal-00543685
%U https://hal.science/hal-00543685
%~ CEA
%~ CNRS
%~ UNIV-LYON1
%~ UNIV-MONTP2
%~ GES
%~ LMI
%~ DRT
%~ UNIV-MONTPELLIER
%~ LETI
%~ CEA-GRE
%~ UDL
%~ UNIV-LYON
%~ UM1-UM2
%~ TEST2-HALCNRS