%0 Conference Proceedings
%T Investigation of low doped n-type and p-type 3C-SiC layers grown on 6H-SiC substrates by sublimation epitaxy
%+ Groupe d'étude des semiconducteurs (GES)
%A Zoulis, G.
%A Sun, J.
%A Beshkova, M.
%A Vasiliauskas, R.
%A Juillaguet, Sandrine
%A Peyre, Herve
%A Syvajarvi, M.
%A Yakimova, R.
%A Camassel, Jean
%< avec comité de lecture
%Z GES:10-026
%( SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2
%B 13th International Conference on Silicon Carbide and Related Materials
%C Nurnberg (GERMANY), France
%I TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
%V 645-648
%P 179-182
%8 2009-10-11
%D 2009
%K Low Temperature Photoluminescence
%K 3C-SiC
%K n-type
%K p-type
%K sublimation epitaxy
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature photoluminescence studies, we demonstrate a low level of residual (n and/or p-type) doping with weak compensation, which is confirmed by secondary ion mass spectroscopy in the case of p-type samples.
%G English
%L hal-00543642
%U https://hal.science/hal-00543642
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2