%0 Conference Proceedings
%T Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
%+ Groupe d'étude des semiconducteurs (GES)
%A Camara, Nicolas
%A Huntzinger, Jean-Roch
%A Tiberj, Antoine
%A Rius, G.
%A Jouault, Benoit
%A Perez-Murano, F.
%A Mestres, N.
%A Godignon, P.
%A Camassel, Jean
%< avec comité de lecture
%Z GES:09-082
%( SILICON CARBIDE AND RELATED MATERIALS 2008
%( SILICON CARBIDE AND RELATED MATERIALS 2008
%B 7th European Conference on Silicon Carbide and Related Materials
%C Barcelona (SPAIN), France
%I TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
%V 615-617
%P 203-206
%8 2008-09-07
%D 2008
%K epitaxial graphene
%K 4H-SiC
%K 6H-SiC
%K 3C-SiC
%K AFM
%K Raman spectroscopy
%K GRAPHITE
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We report a comparative investigation of Few layers graphene grown on 6H, 4H, and 3C-SiC substrates. We show that the size of the graphitic domains depends more on the < 0001 > SiC Surface orientation than the polytypism.
%G English
%L hal-00543294
%U https://hal.science/hal-00543294
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2