%0 Conference Proceedings
%T Transport Properties of Disordered Graphene Layers
%+ Groupe d'étude des semiconducteurs (GES)
%A Gryglas-Borysiewicz, M.
%A Jouault, Benoit
%A Tworzydlo, J.
%A Lewinska, S.
%A Strupinski, W.
%A Baranowski, J. M.
%< avec comité de lecture
%Z GES:09-080
%( ACTA PHYSICA POLONICA A
%( ACTA PHYSICA POLONICA A
%B 4th Workshop on Quantum Chaos and Localisation Phenomena
%C Warsaw (POLAND), France
%V 116
%P 838-840
%8 2009-05-22
%D 2009
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Samples consisting of a few layers of graphene obtained by thermal decomposition of SiC were studied by means of transport experiments at 4 K and in a magnetic field up to 7 T. Transport data show that the samples have a two-dimensional character. Magnetoresistance has an approximately linear character at high magnetic fields, which has been previously observed in graphite samples, and a negative magnetoresistance, at low magnetic fields. The transverse resistivity rho(xy) is nonlinear as a function of B, which can be described using a many-carrier model
%G English
%L hal-00543287
%U https://hal.science/hal-00543287
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2