%0 Journal Article
%T Probing the electrical anisotropy of multilayer graphene on the Si face of 6H-SiC
%+ Groupe d'étude des semiconducteurs (GES)
%A Jouault, Benoit
%A Jabakhanji, B.
%A Camara, Nicolas
%A Desrat, Wilfried
%A Tiberj, Antoine
%A Huntzinger, Jean-Roch
%A Consejo, Christophe
%A Caboni, A.
%A Godignon, P.
%A Kopelevich, Y.
%A Camassel, Jean
%< avec comité de lecture
%Z GES:10-025
%@ 1098-0121
%J Physical Review B: Condensed Matter and Materials Physics (1998-2015)
%I American Physical Society
%V 82
%P 085438
%8 2010
%D 2010
%R 10.1103/PhysRevB.82.085438
%K ELECTRONIC-PROPERTIES
%K EPITAXIAL GRAPHENE
%K FILMS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We studied the in-plane magnetoresistance R(B, T) anisotropy in epitaxial multilayer graphene films grown on the Si face of a 6H-SiC substrate that originates from steplike morphology of the SiC substrate. To enhance the anisotropy, a combination of argon atmosphere with graphite capping was used during the film growth. The obtained micro-Raman spectra demonstrated a complex multilayer graphene structure with the smaller film thickness on terraces as compared to the step edges. Several Hall bars with different current/steps mutual orientations have been measured. A clear anisotropy in the magnetoresistance has been observed, and attributed to variations in electron mobility governed by the steplike structure. Our data also revealed that (i) the graphene-layer stacking is mostly Bernal type, (ii) the carriers are massive, and (iii) the carriers are confined to the first 2-4 graphene layers following the buffer layer.
%G English
%L hal-00543285
%U https://hal.science/hal-00543285
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2