%0 Journal Article
%T Growth of monolayer graphene on 8 degrees off-axis 4H-SiC (000-1) substrates with application to quantum transport devices
%+ Groupe d'étude des semiconducteurs (GES)
%A Camara, Nicolas
%A Jouault, Benoit
%A Caboni, A.
%A Jabakhanji, B.
%A Desrat, Wilfried
%A Pausas, E.
%A Consejo, Christophe
%A Mestres, N.
%A Godignon, P.
%A Camassel, Jean
%< avec comité de lecture
%Z GES:10-023
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 97
%P 093107
%8 2010
%D 2010
%Z 1007.2977
%R 10.1063/1.3480610
%K EPITAXIAL GRAPHENE
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Using high temperature annealing conditions with a graphite cap covering the C-face of an 8 off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magnetotransport measurements. We find a moderate p-type doping, high carrier mobility, and half integer quantum Hall effect typical of high quality graphene samples. This opens the way to a fully compatible integration of graphene with SiC devices on the wafers that constitute the standard in today's SiC industry. (C) 2010 American Institute of Physics. [doi:10.1063/1.3480610]
%G English
%L hal-00543281
%U https://hal.science/hal-00543281
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2