%0 Journal Article
%T Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots
%+ Groupe d'étude des semiconducteurs (GES)
%A Lozano, J. G.
%A Sanchez, A. M.
%A Garcia, R.
%A Gonzalez, D.
%A Herrera, M.
%A Browning, N. D.
%A Ruffenach, Sandra
%A Briot, Olivier
%< avec comité de lecture
%Z GES:07-076
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 91
%P 071915
%8 2007
%D 2007
%R 10.1063/1.2770776
%K FUNDAMENTAL-BAND GAP
%K GROWTH
%K INDIUM
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X A transmission electron microscopy study of the misfit dislocation (MD) networks between InN quantum dots (QDs) and GaN substrate/capping layer is presented. Applying the geometric phase algorithm in planar-view orientation, a complete characterization of the first interface shows a set of three families of 60 degrees MDs lying along the three < 11 (2) over bar0 > directions without node formation. The growth of a GaN capping layer decreases the plastic relaxation degree of the InN QDs by a rearrangement of the MDs. The full relaxation of the capping layer suggest that no changes will occur in the QD strain state during later growths. (C) 2007 American Institute of Physics.
%G English
%L hal-00542123
%U https://hal.science/hal-00542123
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2