%0 Conference Proceedings
%T Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC
%+ Groupe d'étude des semiconducteurs (GES)
%A Juillaguet, Sandrine
%A Guillet, Thierry
%A Bardoux, Richard
%A Camassel, Jean
%A Chassagne, T.
%< avec comité de lecture
%Z GES:07-073
%( Silicon Carbide and Related Materials 2006
%B 6th European Conference on Silicon Carbide and Related Materials
%C Newcastle upon Tyne (ENGLAND), France
%I TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
%V 556-557
%P 351-354
%8 2006-09
%D 2006
%K 4H-SiC
%K stacking faults
%K quantum well
%K TRANSFORMATION
%K SUPERLATTICES
%K OXIDATION
%K EPILAYERS
%K LAYERS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We report a comparison of continuous-wave photo luminescence spectra with spatially-resolved micro-photoluminescence data collected at low temperature on as-grown stacking faults in a 4H-SiC epitaxial layer. We find that the defects have a large triangular shape (50 mu m x 50 mu m x 50 mu m) and that the maximum signal wavelength shifts when scanning across one triangular defect. These results show that the built-in electric field in the stacking fault well can be screened, more or less depending on the incoming light intensity.
%G English
%L hal-00541635
%U https://hal.science/hal-00541635
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2
%~ TEST3-HALCNRS