%0 Conference Proceedings
%T Tunneling and Coulomb Blockade in narrow GaAs/InGaAs/AlGaAs Hall bars in the quantum hall regime
%+ Groupe d'étude des semiconducteurs (GES)
%A Couturaud, O.
%A Jouault, Benoit
%A Bonifacie, S.
%A Chaubet, Christophe
%A Mailly, D.
%< avec comité de lecture
%Z GES:07-072
%( Physics of Semiconductors, Pts A and B
%( Physics of Semiconductors, Pts A and B
%B 28th International Conference on the Physics of Semiconductors (ICPS-28)
%C Vienna (AUSTRIA), France
%I AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1 D, MELVILLE, NY 11747-4501 USA
%V 893
%P 663-664
%8 2006-07-24
%D 2006
%K integer quantum hall effect
%K electronic transport in mesoscopic systems
%K OSCILLATIONS
%K WIRES
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We present a low temperature magnetoconductance study of a submicron hall bar made from an AlGaAs/InGaAs/GaAs heterostructure. Experiments were performed at very low temperature (120 mK), with a magnetic field ranging from OT to 13.5 T. In the presence of a quantizing magnetic field, at the transition between two quantized Hall plateaus, a succession of sharp peaks is detected in the Hall signal RH and in the longitudinal resistance R-L. The peaks appearing on the high-v side of the R-L transition appear to be different from the peaks appearing on the low-v side. They mainly differ by their temperature dependence. On the high-v side of the RL transition, the temperature evolution of the peaks is typical for resonant tunneling through a single state in one of the antidots that are progressively formed when the initially occupied LL is emptied. On the low v of the transition, by contrast, the temperature dependence is different. This may be related to the asymmetry of the density of states, or to additional inelastic processes.
%G English
%L hal-00541616
%U https://hal.science/hal-00541616
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2