%0 Journal Article
%T Landau levels analysis by using symmetry properties of mesoscopic Hall bars
%+ Groupe d'étude des semiconducteurs (GES)
%A Jouault, Benoit
%A Couturaud, O.
%A Bonifacie, S.
%A Mailly, D.
%A Chaubet, Christophe
%< avec comité de lecture
%Z GES:07-070
%@ 1098-0121
%J Physical Review B: Condensed Matter and Materials Physics (1998-2015)
%I American Physical Society
%V 76
%P 161302
%8 2007
%D 2007
%R 10.1103/PhysRevB.76.161302
%K QUANTUM WIRES
%K FLUCTUATIONS
%K COMPRESSIBILITY
%K LOCALIZATION
%K OSCILLATIONS
%K SYSTEMS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We use the resistance fluctuations (RFs) appearing in the integer quantum Hall regime to scan the density of states of a very thin Hall bar. By applying a dc voltage on a top gate, we analyze the correlation properties of the various resistances as a function of the magnetic field and the carrier density. In the gate voltage-magnetic field plane, these RFs follow lines with slopes quantized in unit of filling factor and the slope of these RFs depends on their correlation properties.
%G English
%L hal-00541606
%U https://hal.science/hal-00541606
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2