%0 Journal Article
%T Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
%+ Groupe d'étude des semiconducteurs (GES)
%A Tauk, R.
%A Teppe, Frederic
%A Boubanga Tombet, Stephane
%A Coquillat, Dominique
%A Knap, Wojciech
%A Meziani, Y. M.
%A Gallon, C.
%A Boeuf, F.
%A Skotnicki, T.
%A Fenouillet-Beranger, C.
%A Maude, Duncan Kennedy
%A Rumyantsev, S.
%A Shur, M. S.
%< avec comité de lecture
%Z GES:06-059
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 89
%P 253511
%8 2006
%D 2006
%R 10.1063/1.2410215
%K NONRESONANT DETECTION
%K ELECTRON-MOBILITY
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300 nm have been studied as room temperature plasma wave detectors of 0.7 THz electromagnetic radiation. In agreement with the plasma wave detection theory, the response was found to depend on the gate length and the gate bias. The obtained values of responsivity (<= 200 V/W) and noise equivalent power (>= 10(-10) W/Hz(0.5)) demonstrate the potential of Si MOSFETs as sensitive detectors of terahertz radiation. (c) 2006 American Institute of Physics.
%G English
%L hal-00541599
%U https://hal.science/hal-00541599
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2