%0 Conference Proceedings
%T Spin precession in a model structure for spintronics
%+ Groupe d'étude des semiconducteurs (GES)
%A Ghali, M.
%A Kossut, J.
%A Janik, E.
%A Teppe, Frederic
%A Vladimirova, Maria
%A Scalbert, Denis
%< avec comité de lecture
%Z GES:05-069
%( Physics of Semiconductors, Pts A and B
%B 27th International Conference on the Physics of Semiconductors (ICPS-27)
%C Flagstaff (AZ), France
%I AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1 D, MELVILLE, NY 11747-4501 USA
%V 772
%P 1383-1384
%8 2004-07-26
%D 2004
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Conference papers
%X Transverse electron and hole spin relaxation times were measured in both parts of a generic spintronic structure device consisting of two thin layers: diluted magnetic Cd0.96Mn0.04Te (spin aligner) and a layer non-magnetic CdTe (spin accumulator). By using time-resolved magnetoptical Kerr rotation as a fast time-resolved magnetization probe, we find that the carriers in Cd0.96Mn0.04Te lose their initial spin coherence within similar to 1ps. The undoped spin accumulator is characterized by relatively long electron spin relaxation time that of the order of several hundreds ps.
%G English
%L hal-00541591
%U https://hal.science/hal-00541591
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2