%0 Conference Proceedings
%T Terahertz emission and detection by plasma waves in nanometer size field effect transistors
%+ Groupe d'étude des semiconducteurs (GES)
%A Knap, Wojciech
%A Lusakowski, Jerzy
%A Teppe, Frederic
%A Diakonova, Nina
%A El Fatimy, Abdelouahad
%< avec comité de lecture
%Z GES:06-058
%( IEICE TRANSACTIONS ON ELECTRONICS
%B 6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005)
%C Awaji Isl (JAPAN), France
%V E89C
%P 926-930
%8 2005-08
%D 2005
%K plasma oscillations
%K field effect transistors
%K detection and emission of THz radiation
%K ELECTRON-MOBILITY TRANSISTORS
%K RESONANT DETECTION
%K INVERSION-LAYERS
%K SUB-TERAHERTZ
%K RADIATION
%K SUBTERAHERTZ
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection in GaAs HEMTs due to the drain current. Experiments on spectrally resolved THz emission are described that involve room and liquid helium temperature emission from nanometer GaInAs and GaN HEMTs.
%G English
%L hal-00540647
%U https://hal.science/hal-00540647
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2