%0 Journal Article
%T Terahertz generation by plasma waves in nanometer gate high electron mobility transistors
%+ Groupe d'étude des semiconducteurs (GES)
%A Lusakowski, J.
%A Teppe, Frederic
%A Diakonova, Nina
%A Meziani, Ym
%A Knap, Wojciech
%A Parenty, T.
%A Bollaert, S.
%A Cappy, A.
%A Popov, V.
%A Shur, Ms
%< avec comité de lecture
%Z GES:05-067
%@ 0031-8965
%J physica status solidi (a)
%I Wiley
%V 202
%P 656-659
%8 2005
%D 2005
%R 10.1002/pssa.200460468
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X A resonant voltage tuneable radiation (0.4 THz-1.0 THz) from the gated two dimensional electron gas in a 60 nm InGaAs field effect transistor was investigated. We show that (i) the observed emission appears once the drain-to-source voltage, U-DS, exceeds the threshold value, U-TH; (ii) the resonant frequency can be tuned by U,,, in agreement with the current driven plasma instability model of Dyakonov and Shur; (iii) by applying a quantizing magnetic field one increases U-TH linearly with the magnetic field while the evolution of the emission signal is approximately a universal function of (U-DS - U-TH). (c) 2005 WILEY-VCH Verlag GmbH A Co. KGaA, Weinheim.
%G English
%L hal-00540643
%U https://hal.science/hal-00540643
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2