%0 Journal Article
%T Resonance detection of terahertz radiation in submicrometer field-effect GaAs/AlGaAs transistors with two-dimensional electron gas
%+ Groupe d'étude des semiconducteurs (GES)
%A Antonov, A. V.
%A Gavrilenko, V. I.
%A Maremyanin, K. V.
%A Morozov, S. V.
%A Teppe, Frederic
%A Knap, Wojciech
%< avec comité de lecture
%Z GES:09-078
%J Semiconductors
%V 43
%P 528-531
%8 2009
%D 2009
%R 10.1134/S106378260904023X
%K PLASMON MODES
%K MIXERS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Resonance detection of terahertz radiation by submicrometer field-effect GaAs/AlGaAs transistors (with the gate length L = 250 nm) with two-dimensional electron gas in the channel has been studied at T = 4.2 K. For these transistors, it is shown for the first time that the maximum of the response (the drain-source photovoltage) shifts with an increasing frequency to the region of higher gate voltages in accordance with the Dyakonov-Shur theory. It is shown that, as temperature is increased to 77 K, the dependence of the photovoltage on the gate voltage becomes nonresonant, which is caused by a decrease in the mobility.
%G English
%L hal-00540630
%U https://hal.science/hal-00540630
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2