%0 Conference Proceedings
%T Growth of InN layers by MOVPE using different substrates
%+ Groupe d'étude des semiconducteurs (GES)
%+ Institut Européen des membranes (IEM)
%A Maleyre, B.
%A Ruffenach, Sandra
%A Briot, Olivier
%A Gil, Bernard
%A van Der Lee, A.
%< avec comité de lecture
%Z GES:04-015
%( SUPERLATTICES AND MICROSTRUCTURES
%B Meeting of the European-Materials-Research-Society
%C Strasbourg (FRANCE), France
%V 36
%P 517-526
%8 2004-05-24
%D 2004
%K FUNDAMENTAL-BAND GAP
%K VAPOR-PHASE EPITAXY
%K INDIUM NITRIDE
%K HEXAGONAL INN
%K WURTZITE INN
%K ABSORPTION
%K INXGA1-XN
%K ALLOYS
%K ENERGY
%K FILMS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X This study presents the MOVPE growth of InN films onto different substrate materials, including sapphire, nitrided or not, GaN and AlN buffer layers deposited onto sapphire, and Si(111).;For InN growth onto nitrided sapphire, different growth parameters were investigated in order to determine the best growth conditions. We found that a low V/III molar ratio has to be used in order to increase the growth rate. A light nitridation treatment gives the best electrical properties: mirror like layers with a mobility of 800 cm(2)/V s were obtained. At room temperature, reflectivity experiments show the existence of a transition at 1.2 eV, while photoluminescence appears around 0.8 ev.;Using the same growth conditions onto GaN buffers (with thicknesses ranging from 15 to 1000 A), we found that the best mobilities are obtained above a given buffer thickness.;By comparing also with AlN buffer layers and silicon substrates, we found that our previous conclusion still holds; lightly nitrided sapphire substrate leads to the best electrical properties and morphology. (C) 2004 Elsevier Ltd. All rights reserved.
%G English
%L hal-00540449
%U https://hal.science/hal-00540449
%~ CNRS
%~ UNIV-MONTP2
%~ ENSC-MONTPELLIER
%~ GES
%~ IEM
%~ CHIMIE
%~ UNIV-MONTPELLIER
%~ UM1-UM2
%~ TEST2-HALCNRS