%0 Conference Proceedings
%T Growth of InN quantum dots by MOVPE
%+ Groupe d'étude des semiconducteurs (GES)
%A Ruffenach, Sandra
%A Maleyre, Benedicte
%A Briot, Olivier
%A Gil, Bernard
%< avec comité de lecture
%Z GES:05-057
%( Fourth International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN4)
%B 4th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN4)
%C St Petersburg (RUSSIA), Russia
%I V C H PUBLISHERS, SUITE 909, 220 E 23RD ST, NEW YORK, NY 10010 USA
%V 2
%P 826-832
%8 2004-06-29
%D 2004
%K MOLECULAR-BEAM EPITAXY
%K FUNDAMENTAL-BAND GAP
%K INDIUM NITRIDE
%K DEPENDENCE
%K ALLOYS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We report on comparative studies of basic properties of indium nitride quantum dots (QDs) grown by metal organic vapour phase epitaxy (MOVPE) on GaN, AlN and Si(111). Variation of the growth parameters, such as the growth temperature, deposition time, and the V/III ratio, allowed us to control characteristic sizes and a density of the QDs. With similar growth parameters, both mean height and aspect ratio of the dots are increased in a GaN, AlN, Si line. The InN QDs have been encapsulated by different materials that permit us to investigate their optical response with optical excitation, whose origin, either luminescent or scattered, is discussed. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
%G English
%L hal-00540424
%U https://hal.science/hal-00540424
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2