%0 Journal Article
%T Strain mapping at the atomic scale in highly mismatched heterointerfaces
%+ Groupe d'étude des semiconducteurs (GES)
%A Sanchez, Ana Maria
%A Lozano, Juan Gabriel
%A Garcia, Rafael
%A Herrera, Miriam
%A Ruffenach, Sandra
%A Briot, Olivier
%A Gonzalez, David
%< avec comité de lecture
%Z GES:07-067
%@ 1616-301X
%J Advanced Functional Materials
%I Wiley
%V 17
%P 2588-2593
%8 2007
%D 2007
%R 10.1002/adfm.200600813
%K VAPOR-PHASE EPITAXY
%K INN QUANTUM DOTS
%K DISLOCATIONS
%K GAN
%K INAS/GAAS(111)A
%K HETEROEPITAXY
%K DISPLACEMENT
%K LAYERS
%K FILMS
%K HREM
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X A complete characterization of dislocation network in a highly mismatched interface with high spatial resolution has been performed. The interface between InN quantum dots and a (0001) GaN substrate contains three noninteracting sets of regularly-spaced misfit dislocations lying along < 11 (2) over bar0 > directions. The network has a "Star of David" form, with each star bounding a hexagonal region which is pseudomorphic. These misfit dislocations form a threading dislocation network at the island edges due to free surface forces.
%G English
%L hal-00540273
%U https://hal.science/hal-00540273
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2