%0 Journal Article
%T The determination of the bulk residual doping in indium nitride films using photoluminescence
%+ Groupe d'étude des semiconducteurs (GES)
%A Briot, Olivier
%A Moret, Matthieu
%A Ruffenach, Sandra
%A Gil, Bernard
%< avec comité de lecture
%Z GES:09-029
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 95
%P 031910
%8 2009-07-22
%D 2009
%R 10.1063/1.3187914
%Z 78.55.Cr; 78.66.Fd; 61.72.uj; 68.55.Ln
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We extend to any temperature, the sophisticated calculation of the evolution of the 2 K photoluminescence energy of InN proposed by Arnaudov et al. [Phys. Rev. B 69, 115216 (2004)], in view of determining the residual doping of thin films. From the detailed line shape modeling, we extract the full width at half maximum of the photoluminescence line which, in the first order, varies like n0.51 at low temperature. This allows us to propose a handy tool for rapid residual doping evaluation. Last, temperature and inhomogeneous broadening effects are analyzed. Ignoring the latter is shown to lead to an overestimation of the residual doping.
%G English
%L hal-00540269
%U https://hal.science/hal-00540269
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2