%0 Journal Article
%T The effect of growth temperature on the luminescence and structural properties of GaN : Tm films grown by gas-source MBE
%+ Groupe d'étude des semiconducteurs (GES)
%A Roqan, I. S.
%A Nogales, E.
%A O'Donnell, K. P.
%A Trager-Cowan, C.
%A Martin, R. W.
%A Halambalakis, G.
%A Briot, Olivier
%< avec comité de lecture
%Z GES:08-100
%@ 0022-0248
%J Journal of Crystal Growth
%I Elsevier
%V 310
%P 4069-4072
%8 2008
%D 2008
%R 10.1016/j.jcrysgro.2008.05.037
%K atomic force microscopy
%K X-ray topography
%K molecular beam epitaxy
%K rare earth compounds
%K semiconducting gallium compounds
%K MOLECULAR-BEAM EPITAXY
%K DOPED GAN
%K BLUE EMISSION
%K THIN-FILMS
%K ER
%K ELECTROLUMINESCENCE
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X During molecular beam epitaxy of GaN:Tm films, substrate temperature strongly influences the rare earth incorporation, surface morphology and luminescence spectrum. The Tm incorporation into films grown between 730 and 830 degrees C was estimated by wavelength-dispersive X-ray (WDX) spectroscopy. Comparative WDX, atomic force microscopy (AFM) and cathodoluminescence (CL) mappings reveal that at an optimal growth temperature between 775 and 780 degrees C, a high Tm content (similar to 2.2 at%) and a smooth surface morphology can be obtained, leading to an intense sharp TM3+ emission. For lower substrate temperatures, Ga droplets and large (similar to 8-15 mu m) circular pits mar the sample surface; for higher temperatures, the sharp CL lines disappear due to low Tm content (<= 0.8 at%). (C) 2008 Elsevier B.V. All rights reserved.
%G English
%L hal-00540241
%U https://hal.science/hal-00540241
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2