%0 Journal Article
%T The epitaxial growth of indium nitride using berlinite (AlPO4) and other piezoelectric crystals of the quartz family as substrates
%+ Groupe d'étude des semiconducteurs (GES)
%A Moret, Matthieu
%A Ruffenach, Sandra
%A Briot, Olivier
%A Gil, Bernard
%A Pauthe, M.
%< avec comité de lecture
%Z GES:09-076
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 95
%P 041910
%8 2009
%D 2009
%R 10.1063/1.3193655
%K atomic force microscopy
%K III-V semiconductors
%K indium compounds
%K MOCVD
%K photoluminescence
%K semiconductor epitaxial layers
%K semiconductor growth
%K vapour phase epitaxial growth
%K wide band gap semiconductors
%K X-ray diffraction
%K FUNDAMENTAL-BAND GAP
%K INN
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We report the growth of indium nitride on AlPO4, which is a piezoelectric substrate, by using metal organic vapor phase epitaxy (MOVPE). The substrate we used was the as-grown (011) surface of an AlPO4 crystal grown by hydrothermal synthesis. InN growth occurs as the nonpolar M-plane. The structural, optical, and electrical properties of the epilayer are comparable with those of layers obtained by conventional growth on polar GaN MOVPE templates deposited on C-plane sapphire. We discuss the utilization of other MX-O-4 oxides for growing nitrides.
%G English
%L hal-00540227
%U https://hal.science/hal-00540227
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2