%0 Conference Proceedings
%T Strain-induced correlations between the phonon frequencies of indium nitride
%+ Groupe d'étude des semiconducteurs (GES)
%A Briot, Olivier
%A Gil, Bernard
%A Maleyre, B.
%A Ruffenach, Sandra
%A Pinquier, C.
%A Demangeot, François
%A Frandon, J.
%< avec comité de lecture
%Z GES:04-009
%( INTERNATIONAL CONFERENCE ON PHYSICS OF LIGHT-MATTER COUPLING IN NANOSTRUCTURES III (PLMCN3)
%B 3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3)
%C Acireale (ITALY), Italy
%I V C H PUBLISHERS, SUITE 909, 220 E 23RD ST, NEW YORK, NY 10010 USA
%P 1420-1424
%8 2003-10-01
%D 2003
%K VAPOR-PHASE EPITAXY
%K FUNDAMENTAL-BAND GAP
%K OPTICAL-PROPERTIES
%K DEFORMATION POTENTIALS
%K HEXAGONAL INN
%K THIN-FILMS
%K WURTZITE INN
%K ALPHA-GAN
%K X-RAY
%K RAMAN
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Using measurements of phonons frequencies in large size InN quantum dots deposited by Metal-organic vapor phase epitaxy, we found these frequencies to experience a blue shift with increasing compression. Next we show that all the phonon frequencies reported in the literature are correlated to the strain state of InN and are, within the experimental uncertainty, consistent with each other. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.
%G English
%L hal-00539944
%U https://hal.science/hal-00539944
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2