%0 Conference Proceedings
%T Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applications
%+ Groupe d'étude des semiconducteurs (GES)
%+ Laboratoire Physique des Solides de Toulouse
%A Briot, Olivier
%A Maleyre, Benedicte
%A Ruffenach, Sandra
%A Pinquier, C.
%A Demangeot, François
%A Frandon, J.
%< avec comité de lecture
%Z GES:03-008
%( 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS
%B 5th International Conference on Nitride Semiconductors (ICNS-5)
%C NARA (JAPAN), Japan
%I WILEY-VCH, INC, 605 THIRD AVE, NEW YORK, NY 10158-0012 USA
%P 2851-2854
%8 2003-05-25
%D 2003
%K PHONON DEFORMATION POTENTIALS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Self ordered InN dots are grown by Metal Organic Vapor Phase Epitaxy onto GaN, with very low surface densities. Such nano-objects may be employed in the realization of single photon emitters, for quantum cryptography applications. The growth parameters, like growth temperature, V/III molar ratio and deposition time are investigated. First "large" dots are grown, in order to easily assess the material quality, and are studied both by X-ray diffraction and Raman spectroscopy. After optimising the growth conditions, we decrease the deposition time, in order to obtain nanometer size structures. (C) 2003 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.
%G English
%L hal-00539936
%U https://hal.science/hal-00539936
%~ UNIV-TLSE3
%~ IRSAMC
%~ LPST
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UNIV-UT3
%~ UT3-INP
%~ UT3-TOULOUSEINP
%~ UM1-UM2