%0 Journal Article
%T Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization
%+ Institut d’Electronique et des Systèmes (IES)
%+ Composants à Nanostructure pour le moyen infrarouge (NANOMIR)
%+ Groupe d'étude des semiconducteurs (GES)
%A Cervera, C.
%A Rodriguez, J. B.
%A Perez, J. P.
%A Ait-Kaci, H.
%A Chaghi, R.
%A Konczewicz, Leszek
%A Contreras, Sylvie
%A Christol, Philippe
%< avec comité de lecture
%Z GES:09-072
%@ 0021-8979
%J Journal of Applied Physics
%I American Institute of Physics
%V 106
%P 033709
%8 2009
%D 2009
%R 10.1063/1.3191175
%K PERFORMANCE
%K DETECTORS
%K GASB
%K photodiodes
%K INAS
%K INTERFACE
%K molecular beam epitaxial growth
%K semiconductor superlattices
%K carrier density
%K carrier mobility
%K gallium compounds
%K Hall effect
%K III-V semiconductors
%K indium compounds
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process which, thanks to the suppression of substrate, allows direct Hall measurement on superlattice structures grown on conductive GaSb substrate. Two samples were used to characterize the transport: one grown on a semi-insulating GaAs substrate and another grown on n-GaSb substrate where a etch stop layer was inserted to remove the conductive substrate. Mobilities and carrier concentrations have been measured as a function of temperature (77-300 K), and compared with capacitance-voltage characteristic at 80 K of a photodiode comprising a similar nid superlattice.
%G English
%L hal-00536295
%U https://hal.science/hal-00536295
%~ CNRS
%~ UNIV-MONTP2
%~ IES
%~ GES
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM1-UM2
%~ UM-2015-2021