%0 Conference Proceedings
%T Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode
%+ Institut d’Electronique et des Systèmes (IES)
%+ Composants à Nanostructure pour le moyen infrarouge (NANOMIR)
%+ Groupe d'étude des semiconducteurs (GES)
%A Cervera, C.
%A Perez, Jean-Philippe
%A Chaghi, Radouane
%A Rodriguez, Jean-Baptiste
%A Christol, Philippe
%A Konczewicz, Leszek
%A Contreras, Sylvie
%< avec comité de lecture
%Z GES:09-070
%B 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16)
%C Montpellier (FRANCE), France
%I IOP PUBLISHING LTD, DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
%V 193
%P 012030
%8 2009-08-24
%D 2009
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X In this communication, we report on electrical transport measurements of non-intentionally doped InAs/GaSb Super lattice structures grown by Molecular Beam Epitaxy. Resistivity and Hall Effect measurements were performed on two samples, corresponding to the same SL structure that has been grown on two different substrates: one on semi-insulating GaAs substrate, another on n-type GaSb substrate. To carry out the electrical measurements, the conducting GaSb substrate of the second sample has been removed. The study were performed in the temperature range 77-300K, for magnetic fields of 0.38 T.. The both samples exhibited a change in type of conductivity from p-type at low temperature to n-type near room temperature.
%G English
%L hal-00536291
%U https://hal.science/hal-00536291
%~ CNRS
%~ UNIV-MONTP2
%~ IES
%~ GES
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM1-UM2
%~ UM-2015-2021