%0 Journal Article
%T Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 degrees C
%+ Groupe d'étude des semiconducteurs (GES)
%A Bouguen, Laure
%A Contreras, Sylvie
%A Jouault, Benoit
%A Konczewicz, Leszek
%A Camassel, Jean
%A Cordier, Y.
%A Azize, M.
%A Chenot, Sébastien
%A Baron, N.
%< avec comité de lecture
%Z GES:08-097
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 92
%P 043504
%8 2008
%D 2008
%R 10.1063/1.2838301
%K SEMIINSULATING GAN
%K HEMT STRUCTURE
%K HALL SENSORS
%K TEMPLATES
%K SAPPHIRE
%K MOCVD
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We report a comparative investigation of the magnetic response of long channel AlGaN/AlN/GaN heterostructures (Hall-field effect transistor devices) grown on three different semi-insulating templates on silicon and sapphire. From Hall effect measurements conducted up to 573 K (300 degrees C), we find that some of these specific devices can be used as magnetic sensors in a large temperature range (similar to 600 degrees C) with a magnetic sensitivity close to 60 V/A T and a small thermal drift. On the best sample, between liquid helium temperature and 300 degrees C, the average value of the thermal drift is only -7 ppm/degrees C. (C) 2008 American Institute of Physics.
%G English
%L hal-00535633
%U https://hal.science/hal-00535633
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2