%0 Journal Article
%T An Individual Carbon Nanotube Transistor Tuned by High Pressure
%+ Laboratoire de Physique de la Matière Condensée et Nanostructures (LPMCN)
%+ Laboratoire des colloïdes, verres et nanomatériaux (LCVN)
%A Caillier, Christophe
%A Ayari, Anthony
%A Gouttenoire, Vincent
%A Benoit, Jean-Michel
%A Jourdain, Vincent
%A Picher, Matthieu
%A Paillet, Matthieu
%A Le Floch, Sylvie
%A Purcell, Stephen T.
%A Sauvajol, Jean-Louis
%A Miguel, Alfonso San
%< avec comité de lecture
%Z LCVN:10-079
%@ 1616-301X
%J Advanced Functional Materials
%I Wiley
%V 20
%P 3330-3335
%8 2010
%D 2010
%R 10.1002/adfm.201000398
%K FIELD-EFFECT TRANSISTORS
%K ELECTRONIC-PROPERTIES
%K HYDROSTATIC-PRESSURE
%K SINGLE
%K TRANSITIONS
%K FABRICATION
%K SHAPE
%K SIZE
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X A transistor based on an individual multiwalled carbon nanotube is studied under high-pressure up to 1 GPa. Dramatic effects are observed, such as the lowering of the Schottky barrier at the gold-nanotube contacts, the enhancement of the intertube conductance, including a discontinuity related to a structural transition, and the decrease of the gate hysteresis of the device.
%G English
%L hal-00534234
%U https://hal.science/hal-00534234
%~ CNRS
%~ UNIV-LYON1
%~ UNIV-MONTP2
%~ LCVN
%~ UNIV-MONTPELLIER
%~ UDL
%~ UNIV-LYON
%~ UM1-UM2