THERMAL DEPENDENCE OF LOW-FREQUENCY NOISE IN POLYSILICON THIN FILM TRANSISTORS

Laurent Pichon (1) , Bogdan Cretu (2) , Abdelmalek Boukhenoufa (2)

1 IETR - Institut d'Électronique et des Technologies du numéRique
2 Equipe Electronique - Laboratoire GREYC - UMR6072

Thermal dependence of low frequency noise in low temperature (600°C) polysilicon thin film transistors is studied in devices biased from weak to moderate inversion and operating in the linear mode. Drain current noise spectral density, measured in the temperature range from 260K to 310K, is thermally activated following the Meyer Neldel rule. Analysis of the thermal activation of noise, supported by the theory of trapping/detrapping processes of carriers into oxide traps located close to the interface, leads to the calculation of the deep state interface distribution in function of the Meyer Neldel characteristic energy.

Mots clés: 1/f noise; polysilicon TFts; thermal activation; Meyer Neldel rule; interface state distribution

Domaines: Micro et nanotechnologies/Microélectronique

Laurent Pichon, Bogdan Cretu, Abdelmalek Boukhenoufa. THERMAL DEPENDENCE OF LOW-FREQUENCY NOISE IN POLYSILICON THIN FILM TRANSISTORS. Thin Solid Films, 2009, 517, pp.6367. ⟨10.1016/j.tsf.2009.02.055⟩. ⟨hal-00522575⟩