Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments

Corneliu Ghica (1) , Leona Cristina Nistor (2) , Hugo Bender (3) , Olivier Richard (3) , Gustaaf van Tendeloo (4) , Alexander Ulyashyn (5)

1 National Institute for Materials Physics
2 National Institute for Materials Physics
3 IMEC
4 EMAT
5 UiO - University of Oslo

A microstructural characterization by transmission electron microscopy of the {111} planar defects induced in Si by treatment in hydrogen plasma is discussed. The {111} defects are analyzed by conventional transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). A quantitative image processing by the geometrical phase method is applied to the experimental high-resolution image of an edge-on oriented {111} defect, in order to measure the local displacements and the strain field around it. Using these data, a structural model of the defect is derived. The validity of the structural model is checked by high-resolution image simulation and comparison with the experimental images.

Mots clés: Physical Sciences

Corneliu Ghica, Leona Cristina Nistor, Hugo Bender, Olivier Richard, Gustaaf van Tendeloo, et al.. Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments. Philosophical Magazine, 2006, 86 (32), pp.5137-5151. ⟨10.1080/14786430600801443⟩. ⟨hal-00513718⟩