Atomic-resolution imaging of lattice imperfections in semiconductors by conjoined aberration-corrected HRTEM and exit-plane wavefunction retrieval

Karsten Tillmann (1) , Lothar Houben (1) , Andreas Thust (1)

1 Institut für Festkörperforschung

With the amelioration of the instrumental information limit and the simultaneous mini¬mization of image delocalization, high-resolution transmission electron microscopy is presently enjoying exceeding popularity with respect to the atomic-scale imaging of lattice imperfections in solid state materials. In the present study the benefits de¬rived from the deliberated combination of spherical aberration corrected imaging together with the numerical retrieval of the exit-plane wavefunction from a focal series of micrographs are illustrated by highlighting their combined use for the atomic-scale characterization of lattice de¬fects frequently observed in common semiconductor materials. For these purposes, experimental analyses will review the core structure of Lomer dislocations at In0.3Ga0.7As/GaAs-heterointerfaces and focus on atomic lattice displacements associated with extrinsic stacking faults in GaAs, as well as on the core structure of chromium implantation induced Frank partial dislocations in GaN at directly interpretable contrast features. Supplementary, practical advantages of the retrieval of the exit-plane wavefunction for the subsequent numerical elimination of residual lens aberrations are demonstrated.

Mots clés: Physical Sciences

Karsten Tillmann, Lothar Houben, Andreas Thust. Atomic-resolution imaging of lattice imperfections in semiconductors by conjoined aberration-corrected HRTEM and exit-plane wavefunction retrieval. Philosophical Magazine, 2006, 86 (29-31), pp.4589-4606. ⟨10.1080/14786430600675763⟩. ⟨hal-00513689⟩