 |
|
|
|
| HAL: hal-00512742, version 1 |
| DOI: 10.1016/j.sse.2010.06.004 |
| Detailed view |  Export this paper |
|
|
| Solid-State Electronics 54, 11 (2010) 1332-1338 |
|
|
|
|
| A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison |
|
|
| Sebastien Fregonese 1Cristell Maneux 1 |
|
|
| (2010-11-01) |
|
|
|
| This paper presents a versatile compact model dedicated to 1D transistors in order to predict the ultimate performances of nano-device-based circuits. We have developed a thermionic charge model based on the non-parabolic-energy-dispersion-relation NPEDR. The model is valid for both CNTFET and GNRFET. Model results are compared with GNRFET NEGF simulations. Then, GNRFET and CNTFET performances are analysed through two circuit demonstrators such as a ring oscillator circuit and 6T RAM. |
|
|
|
|
|
|
|
|
|
|
|
| 1: | Laboratoire de l'intégration, du matériau au système (IMS) |
|
|
|
CNRS : UMR5218 – Université Sciences et Technologies - Bordeaux I – Ecole Nationale Supérieure d'Electronique, Informatique et Radiocommunications de Bordeaux – École Nationale Supérieure de Chimie et de Physique de Bordeaux |
|
|
|
|
|
|
|
|
|
| Subject | : | Engineering Sciences/Electronics |
|
|
| Compact – Modelling – Carbon nanotube – Graphene – Nanoribbon – Transistor – Nanowire – SPICE – Verilog A – Thermionic charge |
|
| hal-00512742, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00512742 | |
| oai:hal.archives-ouvertes.fr:hal-00512742 | |
| From: Chrystel Plumejeau | |
| Submitted on: Tuesday, 31 August 2010 14:46:59 | |
| Updated on: Tuesday, 31 August 2010 14:46:59 | |
